Search results for "light-emitting diodes"
showing 7 items of 7 documents
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Hybrid perovskites for light-emitting and photovoltaic devices
2017
El objetivo de esta tesis es el desarrollo de métodos y materiales apropiados para la preparación de capas delgadas de perovskitas híbridas, y su implementación en dispositivos optoelectrónicos. Se dedicará particular atención a las relaciones entre la naturaleza del material, el método de deposición y las propiedades optoelectrónicas. El trabajo está organizado como sigue: - Células solares de perovskitas preparadas por evaporación flash. Se desarrolla un simple método de evaporación por la preparación de células solares. - Dispositivos de perovskita con alta eficiencia fotovoltaica y electroluminiscente. En este capítulo se presentan dispositivos optoelectrónicos de perovskitas preparados…
A simple method for the photometric characterization of organic light-emitting diodes
2022
A simple method for the photometric characterization of organic light-emitting diodes (OLEDs) is reported. It is based on the indirect measurement of the total emitted optical power by using a calibrated photodiode and the optical emission spectrum and space emission diagram of the OLED. From this and by measuring the current–voltage characteristic of the OLED all the relevant radiometric and photometric quantities can be extracted, including the external quantum efficiency. The usual method to collect all photons emitted by a LED source in the half space uses an integrating sphere with the LED source placed at the entrance hole and a photodiode (PD) placed at an exit hole at some point on …
An Ester-Substituted Iridium Complex for Efficient Vacuum-Processed Organic Light-Emitting Diodes
2009
An orange-red-emitting iridium complex (N958) was prepared, and its photophysical and device-based characteristics were investigated. Despite N958 displaying quite poor photophysical properties in solution (acetonitrile), organic light-emitting diode (OLED) devices based on the complex exhibit an efficiency close to 10%.
Ce:Y3Al5O12−Poly(methyl methacrylate) Composite for White-Light-Emitting Diodes
2014
A Ce:YAG-poly(methyl methacrylate) (PMMA) composite was prepared by using the melt compounding method. The structure and morphology were investigated by X-ray diffractometry, transmission electron microscopy, and small-angle X-ray scattering. The optical properties (emission, excitation, and fluorescence decay rate) of the composite were studied by using photoluminescence spectroscopy. The polymer–filler interactions were studied using 13C cross-polarization magic-angle spinning NMR spectroscopy (13C{1H} CP-MAS NMR). The results indicated that Ce:YAG particles are well-dispersed in the PMMA matrix without loss of their luminescence properties or significant spectral shift, thus suggesting t…
Improving the efficiency of light-emitting diode based on a thiophene polymer containing a cyano group
2007
Abstract We report on the overall improvement of a single layer organic light-emitting diode device based on poly{[3-hethylthiophene]-co-3-[2-( p -cyano-phenoxy)ethyl]thiophene} or namely PTOPhCN. This polymer was recently developed by adding a cyano group as a side-chain substituent of the thiophenic backbone onto the main polymer chain and showed promising results for light-emitting diode devices. Using an improved device layout, bright red electroluminescence was obtained at 4 V and showed a luminance of about 400 cd/m 2 at 8 V with current densities in the order of 6000 A/m 2 .
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
2019
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously shown to dramatically improve internal quantum efficiency of near-UV LEDs, via a decrease in the density of deep traps responsible for nonradiative recombination in the QW region. The main differences between samples with and without UL were (a) a higher compensation of Mg acceptors in the p-GaN:Mg contact layer of the sample without UL, which correlates with the presence of traps with an activation energy of 0.06 eV in the QW region, (b) the…